smd type transistors features roh lead (pb)-free version is rohs compliant. 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain absolute maximum ratings ta = 25 parameter symbol 5 sec steady state unit drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j =150 )*2t a =25 ------------------------------------------------ t a =70 i d -2.4 -1.9 -2.2 -1.8 a pulsed drain current *1 i dm a continuous source current (diode conduction) *2 i s -0.72 -0.6 a power dissipation *2 t a =25 ------------------------------------------------- t a =70 p d 0.9 0.57 0.7 0.45 w jumction temperature t j storage temperature t stg * 1. pulse width limited by maximum junction temperature. * 2. surface mounted on fr4 board, t 5sec. -55to+150 -20 8 -10 150 thermal resistance ratings ta = 25 parameter symbol typical maximum unit maximum junction-to-ambient *1 120 145 maximum junction-to-ambient *2 140 175 * 1. surface mounted on fr4 board, t 5sec. * 2. surface mounted on fr4 board. r thja /w p-channel 2.5-v (g-s) mosfet 1 LSP01
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d = -250 a -20 gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -0.45 -0.95 gate-body leakage i gss v ds =0v,v gs = 8v 100 na v ds =-20v,v gs =0v -1 v ds =-20v,v gs =0v,t j =55 -10 v ds -5 v, v gs =-4.5v -6 v ds -5 v, v gs =-2.5v -3 v gs =-4.5v,i d = -2.8 a 0.08 0.1 v gs =-2.5v,i d = -2.0 a 0.11 0.15 forward transconductance * g fs v ds =-5v,i d = -2.8 a 6.5 s diode forward voltage * v sd i s = -0.75 a, v gs = 0 v -0.8 -1.2 v total gate charge q g 4.5 10 gate-source charge q gs 0.7 gate-drain charge q gd 1.1 input capacitance c iss 375 output capacitance c oss 95 reverse transfer capacitance c rss 65 t d(on) 20 30 t r 40 60 t d(off) 30 45 t f 20 30 * pulse test: pw 300 s duty cycle 2%. v turn-off time turn-on time on-state drain current i d(on) zero gate voltage drain current i dss a drain-source on-state resistance * r ds(on) a ns v ds =-6v,v gs =-4.5v,i d =-2.8a v ds =-6v,v gs =0,f=1mhz v dd =-6v,r l =6, i d =-1a,v gen =- 4.5v , r g =6 pf nc 2 LSP01
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